RIE-ICP Etcher
Description:
Dry etching SiO2 Wafer
• Gases available for etching: CF4, C4F8, CHF3, O2 & Ar
• RF power source: 1x 1200W at 13.56MHz for Coil electrode
• 1x 300W at 13.56MHz for Platen electrode
• Substrate size: 4” single wafer or smaller