Dual Beam Focused Ion Beam / Field Emission Scanning Electron Microscope (FIB/FESEM)


Model: Helios G4 UX


Helios G4 UX is a dual beam FIB/FESEM system, containing both a focused Ga+ ion beam and an ultra-high resolution field emission scanning electron column and their combined use. The combination of FIB and FESEM enables simultaneously imaging during FIB milling/deposition and accurate monitoring of progress with FESEM.


Combined with advances in patterning and a suite of accessories, the system should be available to perform direct milling and fabrication of 2D and 3D micro-and nano-structures, rapid preparation of ultra-thin lamella samples for TEM and needles for atom probe tomography. In addition, metal and oxide pattern deposition can be performed.


Focused Ion Beam (FIB)

Phoenix ion column with superior high current and low voltage performance

·             Ion Gun:  Gallium liquid metal ion source

·             Ion beam current range: 0.1 pA - 65 nA

·             Accelerating voltage range: 500 V - 30 kV

·             Maximum horizontal field width: 0.9 mm at beam coincidence point

·             Detector: ion conversion and electron (ICE) detector for secondary ions (SI) and electrons (SE)

Scanning Electron Microscope (SEM)

Ultra - high resolution field emission SEM

·             Electron Source: thermal Schottky field emitter with UC+ monochromator

·             Electron beam current range: 0.8 pA - 100 nA

·             Accelerating voltage range: 350 V - 30 kV

·             With electron beam deceleration mode (BDM), curtailing charging on nonconductive specimens and improving low KV performance

·             Landing energy range: 20 eV - 30 keV

·             Electron beam resolution at coincident point: 1.2 nm @ 1.0 kV

·              Detectors:

-              Everhart-Thornley Detector (ETD) for secondary electrons (SE) and backscattered electrons (BSE)

-              Through Lens Detector (TLD) for high resolution SE / BSE imaging

-              Retractable low voltage, high contrast directional solid-state

backscatter electron detector (DBS)


·             Gas Injection System (GIS) for beam induced deposition, gas source available:

- Platinum (Pt) deposition

- Tungsten (W) deposition

- Insulator deposition

·             EasyLift™ for precise in situ sample manipulation, mainly used for thin section TEM specimen pick-up and mounting

·             Equipped with a IR camera for viewing sample/column

·             Equipped with an optical camera for sample navigation

·             Equipped with a loadlock chamber for quick sample exchange

·             With plasma cleaner integrated in the chamber to remove contamination

·             With cryo decontamination device to reduce contamination